CM100TXP-24T Mitsubishi

CM100TXP-24T Mitsubishi

IGBT Specifications

This IGBT features the following specifications:

Electrical Characteristics

  • Gate-Emitter Voltage: -20 V to 20 V
  • Collector-Emitter Saturation Voltage: 1.55 V to 1.95 V
  • DC Collector Current: 100 A
  • Gate-Emitter Leakage Current: 0.5 uA

Thermal Characteristics

  • Junction Temperature: 175 degrees C

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