IRF7910TRPBF MOSFET

This is a dual N-channel 10 A 12 V HEXFET SOIC 8-pin MOSFET manufactured by Infineon. The manufacturer's part number is IRF7910TRPBF. It has a maximum continuous drain current of 10 A.

Features

• Manufactured with highly durable silicon material
• Product width: 4 mm
• Isolated transistor configuration
• Maximum drain-source voltage: 12 V
• Maximum gate threshold voltage: 2 V
• SOIC package type
• 2 elements per chip
• Minimum gate threshold voltage: 0.6 V
• Maximum operating temperature: +150 °C
• Typical gate charge at Vgs: 17 nC at 4.5 V
• Channel type: [Type of channel]
• Exact length: 5 mm
• 8 pins
• Enhancement mode channel
• Surface mount configuration
• Maximum power dissipation: up to 2 W
• HEXFET product, a preferred choice for users
• Maximum gate-source voltage: -12 V, +12 V
• Height: 1.5 mm
• Minimum operating temperature: -55 °C
• Forward diode voltage: 1.3 V
• Maximum drain-source resistance: up to 50 mΩ